• Program
  • Keynote speeches

    Klaus von Klitzing, Max Planck Institute for Solid State Research, Germany
    How basic research on silicon fieldeffect transistors will change our international system of units

    Hans Richter, GFWW Frankfurt, Oder, Germany
    30 years of GADEST—Design of materials and functionality

    Confirmed invited speakers

    Daniel Alquier, Université François-Rabeleais de Tours, France
    GaN power devices: impact of growth and process-induced defects

    Peter Deák, Univ. Bremen, Germany
    Theoretical studies on the NV(-) defect in diamond

    Stefan Estreicher, Texas Tech University, USA
    Heat flow and defects in semiconductors: an atomistic study

    Marco Fanciulli, Università degli Studi di Milano-Bicocca, Italy
    Defects in silicon and germanium nanowires

    Giso Hahn, Universität Konstanz, Germany
    BO-correlated defects: avoiding degradation of bulk lifetime in crystalline Si by regeneration

    Gudrun Kissinger, IHP Innovations for High Performance Microelectronics, Germany
    Internal gettering of copper for microelectronic applications

    Chung-wen Lan, National Taiwan University, Taiwan
    Recent Progress of Crystal Growth Technology for Solar Silicon Ingot

    Teimuraz Mchedlidze, Technische Universität Dresden, Germany
    Deep level transient spectroscopy measurements on fabricated device structures

    John Murphy, Warwick University, UK
    Gettering and passivation of bulk defects in silicon photovoltaic materials

    Yuta Nagai, GlobalWafers Japan Co., Ltd., Japan
    Growth of Czochralski silicon crystals having ultralow carbon concentrations

    Michael Oehme, Universität Stuttgart, Germany
    Ge and GeSn light emitters on Si

    Michael Seibt, Universität Göttingen, Germany
    Defect interactions in semiconductors for photovoltaics

    Eddy Simoen, IMEC and Universiteit Gent, Belgium
    Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

    Talid Sinno, University of Pennsylvania, USA
    Atomistic simulations of microstructure in (and on) silicon

    Erdmann Spiecker, Universität Erlangen-Nürnberg, Germany
    Dislocations in bilayer graphene

    Wolfgang Skorupa, Helmholtz-Zentrums Dresden-Rossendorf, Germany
    Thermal processing within milliseconds: semiconductors and beyond

    Meng Tao, Arizona State University, USA
    Valence-mending passivation of Si(100) surface: principle, practice and application

    Jonathan Veinot, University of Alberta, Canada
    Semiconductor nanoparticle synthesis and functionalization

    Eicke Weber, Fraunhofer Institute for Solar Energy Systems ISE and Albert-Ludwigs University Freiburg, Germany
    Solar Cells from Upgraded Metallurgical Silicon

    Johannes Will, Universität Erlangen-Nürnberg, Germany
    Real-time look on the precipitate growth in silicon