Program for Sunday, September 20th

10:00 - 10:35 Coffee
10:35 Opening session
Chairperson: P. Pichler
10:35 - 10:45 Conference opening
P. Pichler
10:45 - 11:30 Keynote: How basic research on silicon fieldeffect transistors will change our international system of units
K. von Klitzing
11:30 - 11:50 Keynote: 30 years of GADEST—Design of materials and functionality
H. Richter
11:50 - 12:30 Invited: Solar Cells from Upgraded Metallurgical Silicon
E. Weber, S. Rein, S. Riepe
12:30 - 14:00 Lunch
14:00 Solar silicon growth I
Chairperson: H. J. Möller
14:00 - 14:40 Invited: Recent progress of crystal growth technology for solar silicon ingot
C. W. Lan
14:40 - 15:00 50 cm size seed cast Si ingot growth and its characterization
T. Sekiguchi, Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, S. Nakano, K. Kakimoto
15:00 - 15:20 Understanding the performance of fine grained vs. conventional mc-Si, based on grain size, - orientation and - boundary type distribution
T. Lehmann, E. Meißner, C. Reimann, J. Friedrich
15:20 - 15:50 Coffee break
15:50 Solar silicon growth II
Chairperson: C. W. Lan
15:50 - 16:10 A one step process for the recovery of the electrical properties of “red-zone” wafers for mc-Si solar cells
G. F. Martins, T. Burton, P. MacDonald, R. S. Bonilla, P. R. Wilshaw
16:10 - 16:30 Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique
R. R. Prakash, K. Jiptner, J. Chen, Y. Miyamura, H. Harada, T. Sekiguchi
16:30 - 16:50 Defect engineering of cast crystalline silicon based on seed assisted growth
S. Yuan, X. Yu, D. Hu, Y. Xu, Y. Wan, D Yang
16:50 Bus transfer and welcome reception at Rabeneck Castle
For details, see the Social program