Program for Monday, September 21st

09:00 Light-induced degradation
Chairperson: R. J. Falster
09:00 - 09:40 Invited: BO-correlated defects: Avoiding degradation of bulk lifetime in crystalline Si by regeneration
G. Hahn, S. Wilking, A. Herguth
09:40 - 10:00 Discussion of ASi-Sii-defect model in frame of experimental results on P line in indium doped silicon
K. Lauer, C. Möller, D. Schulze, C. Ahrens
10:00 - 10:20 New insight into the boron-oxygen defect formation and regeneration
T. Niewelt, J. Schön, J. Broisch, S. Rein, J. Haunschild, W. Warta, M. C. Schubert
10:20 - 10:40 Comparison of boron-oxygen and copper-related light-induced degradation in silicon
J. Lindroos, M. Rinio, H. Savin
10:40 - 11:10 Coffee break
11:10 Surface passivation
Chairperson: G. Hahn
11:10 - 11:50 Invited: Valence-mending passivation of Si(100) surface: principle, practice and application
M. Tao
11:50 - 12:10 Stable, extrinsic, field effect passivation for back contact silicon solar cells
K. Collett, L. Rands, R. S. Bonilla, G. Martins, R. Lobo, P. R. Wilshaw
12:10 - 12:30 Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors
E. Simoen, V. Ferro, B.J. O’Sullivan
12:30 - 14:00 Lunch
14:00 Gettering
Chairperson: H. Savin
14:00 - 14:40 Invited: Defect interactions in semiconductors for photovoltaics
M. Seibt, A. Ahrens, J. Clemens, M. A. Falkenberg, P. Krenckel, P. Saring, M. Korosheva, V. Kveder
14:40 - 15:20 Invited: Gettering and passivation of bulk defects in silicon photovoltaic materials
J. Murphy, M. Al-Amin
15:20 - 15:40 Enhanced internal gettering of iron in n/n+ epitaxial silicon wafer: Effect of high temperature rapid thermal annealing in nitrogen ambient
P. Dong, X. Liang, D. Tian, X. Ma, D. Yang
15:40 - 16:10 Coffee break
16:10 Dislocations in semiconductors
Chairperson: M. Seibt
16:10 - 16:50 Invited: Structure and properties of dislocations in bilayer graphene
E. Spiecker, B. Butz, C. Dolle, F. Niekiel, K. Weber, D. Waldmann, B. Meyer, H. B. Weber
16:50 - 17:10 Spatial distribution of the dislocation trails in silicon
V. I. Orlov, E. B. Yakimov, N. Yarykin
17:10 - 17:30 Orientation dependency of dislocation generation in Si growth process
K. Jiptner, Y. Miyamura, H. Harada, R. R. Prakash, B. Gao, K. Kakimoto, T. Sekiguchi
17:30 - 17:50 Interplay of Ni and Au atoms with dislocations and vacancy defects generated by moving dislocations in Si
V. V. Kveder, М. А. Khorosheva, M.Seibt
17:50 - 18:10 Electronic properties of dislocations
M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee
18:10 - 19:10 Dinner
19:10 - 21:00 Poster Session I
Potential synthesis of solar-grade silicon from rice husk ash
B. O. Ayomanor, K. D. Vernon-Parry
Investigation into efficiency-limiting defects in mc-Si solar cells
O. A. Al-Ani, A. M. A. Sabaawi, J. P. Goss, N. E. B. Cowern, P. R. Briddon, M. J. Rayson
Investigation of parasitic surface recombination mechanisms in high-lifetime oxidised n-Si
R. S. Bonilla, G. Martins, P. R. Wilshaw
Low temperature activation of grown-in defects limiting the lifetime of high purity float-zone silicon wafers
N. E. Grant, F. E. Rougieux, D. Macdonald
Investigation of ZnMnTeO solar cells materials on the base of ZnMnTe
L. Trapaidze, M. Sharvashidze, T. Butkhuzi, N. Gapishvili, T. Khulordava, E. Kekelidze
Characterization of Si convertors of beta-radiation in the scanning electron microscope
M.A. Polikarpov, E.B. Yakimov
Kinetic model of precipitate growth during phase separation in metastable binary solid solutions
A. Sarikov
Effect of oxygen precipitation on the carrier transportation in Czochralski silicon
P. Dong, X. Ma, D. Yang
Segregation gettering of nickel in p/p+ silicon wafers
K. Torigoe, T. Ono, K. Nakamura
Search for effective sites of proximity gettering in Si wafers by first principles calculation
S. Shirasawa, K. Sueoka
Misfit dislocation free epitaxial growth of SiGe on compliant nano-structured silicon
P. Zaumseil, Y. Yamamoto, M. A. Schubert, G. Capellini, T. Schroeder
Influence of the electrolyte composition on anisotropy of pore formation rate in p-Si
Yu. A. Zharova, E.V. Astrova
Coulomb impurity effects on optical property of ellipsoidal quantum dots in semiconductor
Z. S. Machavariani, T. Tchelidze
ZnO nanoparticles formation in 64Zn+ ion implanted Al2O3
V. V. Privezentsev, V. S. Kulikauskas, A. A. Batrakov, A. Yu. Trifonov, E. A. Shteinman, A. V. Tereschenko
Silicon germanium interdiffusion in SiGe in presence of defects and dopants
C. Zechner, N. Zographos
Modeling the post-implantation annealing of platinum
E. Badr, P. Pichler, G. Schmidt
Defect formation in ion-implanted Si – Approach to controlled semiconductor optical properties
N. Khuchua, M. Tigishvili, R. Melkadze, N. Dolidze, N. Gapishvili, Z. Jibuti, G. Dovbeshko, V. Romanyuk
Dopant profiling by C-V and Q-V methods extended to the lightly doped samples
A. Czett, Cs. Buday, F. Korsós, M. Myronov, M. Wilson, S. Savtchouk
Non-visual defect monitoring with surface voltage mapping: application for semiconductor IC and PV technology
P. Edelman, D. Marinskiy, A. Savtchouk, J. D’Amico, A. Findlay, M. Wilson, C. Almeida, J. Lagowski