Program for Tuesday, September 22nd

09:00 Czochralski silicon growth
Chairperson: W. von Ammon
09:00 - 09:40 Invited: Growth of Czochralski silicon crystals having ultralow carbon concentrations
Y. Nagai, K. Kashima, S. Nakagawa, M. Higasa
09:40 - 10:00 Electrically inactive dopants in heavily doped as-grown Czochralski silicon
L. Stockmeier, M. Elsayed, R. Krause-Rehberg, M. Zschorsch, L. Lehmann, J. Friedrich
10:00 - 10:20 Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals
K. Sueoka, K. Nakamura, J. Vanhellemont
10:20 - 10:50 Coffee break
10:50 Transition metals in silicon
Chairperson: V. Kveder
10:50 - 11:30 Invited: Internal gettering of copper for microelectronic applications
G. Kissinger, D. Kot, M. A. Schubert, A. Sattler, T. Müller
11:30 - 11:50 Fast detection method of copper contamination in silicon
A. Inglese, H. Savin
11:50 - 12:10 Interaction of interstitial copper with isolated vacancies in silicon
N. Yarykin, J. Weber
12:10 - 12:30 Detection and prevention of palladium contamination in silicon devices
M. L. Polignano, I. Mica, A. Brambilla, C. Brambilla, S. Brambilla, M. Ceresoli, D. Codegoni, L. Farini, F. Somaini
12:30 - 14:00 Lunch
14:00 Iron in silicon
Chairperson: J. D. Murphy
14:00 - 14:40 Invited: Deep Level Transient Spectroscopy measurements on fabricated device structures
T. Mchedlidze, J. Weber
14:40 - 15:00 Mössbauer Spectroscopy on Fe impurities in Si materials
Y. Yoshida, Y. Ino, K. Tanaka
15:00 - 15:20 Direct observations of Fe impurities in Si with different Fermi levels by Mössbauer spectroscopy
Y. Ino, K. Tanaka, K. Sakata, Y. Yoshida
15:20 - 15:40 Determination of activation energy of the iron acceptor pair association and dissociation reaction
K. Lauer, C. Möller, M.Auge, D. Schulze
15:40 - 16:10 Coffee break
16:10 Atomistic defect simulations
Chairperson: S. K. Estreicher
16:10 - 16:50 Invited: Atomistic simulations of microstructure in (and on) silicon
T. Sinno
16:50 - 17:30 Invited: Theoretical studies on the NV(-) defect in diamond
P. Deák, M. Kavani, B. Aradi, T. Frauenheim, J.-P. Chou, A. Gali
17:30 - 17:50 Electrical levels and diffusion barriers of early 3d and 4d transition metals in silicon
A. G. Marinopoulos, P. Santos and J. Coutinho
17:50 - 18:10 Multiscale simulation of photoluminescence defects generated by ion implantation in crystalline Si
I. Santos, M. Aboy, P. López, L. A. Marqués, L. Pelaz
18:10 - 19:10 Dinner
19:10 - 21:00 Poster Session II
Electrical properties of defects in Ga-doped Ge irradiated with fast electrons and protons
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan
Carbon-hydrogen complexes in n- and p-type SiGe-alloys studied by Laplace deep level transient spectroscopy
R. Stübner, Vl. Kolkovsky, J. Weber, N. Abrosimov
Effect of nitrogen-doping on the properties of radiation defect centers in FZ silicon
P. Kamiński, R. Kozłowski, B. Surma, M. Kozubal, C. Hindrichsen, T. Sveigaard, L. Jensen, M. Kwestarz, J. Jabłoński
Boron-related defects in low temperature irradiated silicon
L. I. Khirunenko, M. G. Sosnin, A.V. Duvanskii, N.V. Abrosimov, H. Riemann
Thermally stable vacancy complexes in silicon n-FZ-Si(P) irradiated with 0.9 MeV electrons and 15 MeV protons
N. Arutyunov, M. Elsayed, R. Krause-Rehberg, V. Emtsev, G. Oganesyan, V. Kozlovski
Metastable defects in proton implanted and annealed silicon
M. Jelinek, J. G. Laven, N. Ganagona, R. Job, W. Schustereder, H.-J. Schulze, M. Rommel, L. Frey
Hydrogen-vacancy complexes and their deep states in n-type silicon
I. L. Kolevatov, F. Herklotz, V. Bobal, B. G. Svensson, E. V. Monakhov
Oxygen-related defects formed upon thermal double donor annihilation in silicon: FTIR and DLTS studies
L. I. Murin, E. A. Tolkacheva, V. P. Markevich, A. R. Peaker, B. G. Svensson
Effect of deep level defects on the performance of Si high voltage picosecond range avalanche diodes
V. Brulevskij, P. Brunkov, I. Smirnova, P. Rodin, I. Grekhov
Electrical characterization of femtosecond laser pulsed sulfur doped silicon
A. Ahrens, P. Saring, A. L. Baumann, S. Kontermann, M. Seibt
Interstitial radiation defects in copper-doped silicon
N. Yarykin, J. Weber
Spin relaxation times of donor centers associated with lithium in monoisotopic 28Si
A. A. Ezhevskii, A. P. Detochenko, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov, D. G. Zverev, G. V. Mamin, N. V. Abrosimov, H. Riemann
The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon
A. V. Soukhorukov, D. V. Guseinov, A. V. Kudrin, S. A. Popkov, A. A. Detochenko, A. V. Koroleva, A. A. Ezhevskii, A.A. Konakov, N. V. Abrosimov, H. Riemann
Electrical characterization of defects introduced in n-type N-doped 4H-SiC during electron beam exposure
E. Omotoso, W. E. Meyer, F. D. Auret, S. M. M. Coelho, M. Diale, P. N. M. Ngoepe
Defect composition in acceptor doped ZnO quantum structures
T. Tchelidze, T. Kerselidze
Stress relaxation by strain in the Si-SiO2 system and its influence on the interface properties
D. Kropman, T. Kärner, T. Laas, A. Medvid
Molecular dynamics simulations of intrinsic defects in amorphous Ge
P. López, D. Calvo, L. A. Marqués, I. Santos, M. Aboy, L. Pelaz
A density functional study of iron segregation at the ISF and Σ5-(001) grain boundary in mc-Si
O. A. Al-Ani, J. P. Goss, N. E. B. Cowern, P. R. Briddon, M. Al-Hadidi, A. K. Tiwari, M. J. Rayson
A new approach for calculating the band gap of semiconductors within the density functional method
V. Gusakov
Ab initio studies of self interstitials (Mgi, and Sei) MgSe wide-gap semiconductor
E. Igumbor, W. E. Meyer, O. K. Obodo
Spatially localized vibrational modes of NV- in diamond
V. J. B. Torres, M. J. Rayson, P. R. Briddon