Program for Friday, September 25th

09:00 Defects in GaN and SiC
Chairperson: J. Friedrich
09:00 - 09:40 Invited: GaN power devices : impact of growth and process-induced defects
D. Alquier, A. Yvon, E. Collard, Y. Cordier, F. Cayrel
09:40 - 10:00 Investigations of critical structural defects in active layers of GaN-on-Si for power electronic devices
M. Knetzger, E. Meissner, J. Derluyn , M. Germain, J. Friedrich
10:00 - 10:20 Radiation damage in 4H-SiC and its effect on power device characteristics
P. Hazdra, S. Popelka, V. Záhlava, J. Vobecký
10:20 - 10:50 Coffee break
10:50 Nanoscaled devices and structures II
Chairperson: M. Fanciulli
10:50 - 11:30 Invited: Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices
E. Simoen, B. Cretu, W. Fang, M. Aoulaiche, J.-M. Routoure, R. Carin, J. Luo, C. Zhao and C. Claeys
11:30 - 12:10 Invited: Semiconductor nanoparticle synthesis and functionalization
J. Veinot
12:10 - 12:30 Analysis of EL emitted by LEDs on Si substrates containing GeSn/Ge MQW as active layers
B. Schwartz, P. Saring, M. Kittler, M. Oehme, K. Kostecki, E. Kasper, J. Schulze
12:30 - 12:50 Photostimulated solid state synthesis of functional oxide materials
A. Shengelaya, D. Daraselia, D. Japaridze, Z. Jibuti, K. A. Müller
12:50 - 13:00 Closing
P. Pichler
13:00 - 14:00 Lunch