Conference Topics

The GADEST 2015 conference aimed to cover a broad range of topics, from theoretical analysis of defect problems towards practical engineering solutions. The purpose of the conference was to provide a forum for interactions between scientists and engineers engaged in the fields of semiconductor defect physics, materials science and technology. Fundamental aspects and technological problems associated with defects in devices and materials ranging from micro- and nano-electronics to power electronics and photovoltaics were at the heart of the conference. While the focus was expected to be still on silicon-based technologies, we also encouraged those working on other semiconductors to contribute.

Materials synthesis

  • Bulk and layer growth of advanced semiconductor materials (e.g. large-diameter Si crystals, strained Si, SOI, Ge, SiGe, SiC, GaN, GaAs)
  • Advances in substrates for solar cells (e.g. single crystals, continuous CZ, multicrystalline materials, ribbons, thin films on substrates)
  • Strain-engineering
  • Semiconductor nanocrystals, nanowires and quantum dots
  • Modeling and simulation of materials synthesis
  • Advanced structural and electrical characterization of semiconductor materials

Defects and defect engineering in semiconductors

  • Intrinsic point defects and extended defects (e.g. clusters, dislocations, grain boundaries)
  • Light elements (e.g. hydrogen, oxygen, carbon, nitrogen, fluorine)
  • Transition metals
  • Introduction of defects by technological processes
  • Reactions involving defects (e.g. formation of thermal donors and oxygen precipitates, gettering, passivation, light-induced formation of defects)
  • Defect engineering of Si-based thermoelectric devices
  • Modeling and simulation of defects and their interactions, including ab-initio calculations
  • Advanced structural, spectroscopic and electrical characterization of defects

Defect aspects for devices

  • Next generation micro- and nano-electronics
  • Power electronics
  • Advanced solar cells
  • Silicon-based photonics and photonic crystals
  • Spin properties and spintronics
  • Co-integration of materials for devices (including graphene, Ge, III-Vs and organics)
  • Gettering and passivation of defects in photovoltaic devices
  • Modeling and simulation of defect-device issues
  • Advanced characterization of defects in devices

This list of topics was not intended to be exhaustive and we were happy to consider abstracts submitted in other areas related to the broad GADEST theme.